06N03LA

OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance P-TO263-3-2 175 °C operating temperature dv /dt rated IPB06N03LA IPI06N03LA, IPP06N03LA Product Summary V DS R DS(on),max (SMD version) ID 25 V 5.9 mΩ 50 A P-TO262-3-1 P-TO220-3-1 Type IPB06N03LA IPI06N03LA IPP06N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4146 Q67042-S4147 Q67042-S4148 Marking 06N03LA 06N03LA 06N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T C=25 °C2) I D=45 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 350 225 6 ±20 83 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 1.3 page 1 2003-12-18 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) IPB06N03LA IPI06N03LA, IPP06N03LA min. Values typ. Unit max. - - 1.8 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise sp...