FTD1003

Ordering number:ENN6428 www.DataSheet4U.com P-Channel Silicon MOSFET FTD1003 Load Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD1003] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 0.5 1 0.25 4 (0.95) 0.125 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings –20 ±10 –1.4 –5.6 0.8 1.0 150 –55 to +150 Unit V V A A W W Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 0.1 Specifications 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 1.0 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–1.4A ID=–1.4A, VGS=–4V ID=–0.7A, VGS=–2.5V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –0.4 2.1 3 235 340...