2SJ684

Ordering number : ENA1058 2SJ684 www.DataSheet4U.com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 Features General-Purpose Switching Device Applications Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --45 --180 50 150 --55 to +150 70 --45 Unit V V A A W °C °C mJ A Note : *1 VDD=--30V, L=50μH, IAV=--45A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=-1mA, VGS=0V VDS=-100V, VGS=0V VGS= ±16V, VDS=0V Ratings min --100 --1 typ max Unit V Marking : J684 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sust...