KC860W

www.DataSheet4U.com SMD Type PNP General Purpose Transistors KC860W(BC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak collector current Peak base current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM PD R JA Rating -50 -45 -5 -100 -200 -200 200 625 -65 to +150 Unit V V V mA mA mA mW K/W TJ, Tstg www.kexin.com.cn 1 www.DataSheet4U.com SMD Type KC860W(BC860W) Electrical Characteristics Ta = 25 Parameter Collector-Cutoff Current Emitter- cutoff current KC860W DC Current Gain KC860BW KC860CW Collector-Emitter Saturation Voltage VCE(sat) IC = -10 mA, IB =- 0.5 mA IC = -100 mA, IB =- 5.0 mA Base-Emitter Voltage Collector capacitance Emitter capacitance VBE Cc Ce IC = -2mA, IB=-5A IC = -10 mA, IB=-5A IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -200 A; VCE = -5 V; RS = 2 k 10 Hz to 15.7 kHz IC=-200 A; VCE = -5 V; RS = 2 k 1 kHz; B = 200 Hz ;f = ;f = hFE IC = -2.0 mA, VCE = -5.0 V Symbol ICBO IEBO Testconditons VCB =- 30 V, IE = 0 VCB =- 30 V, IE = 0, TA = 150 IC=0,VEB=-5V Transistors Min Typ Max -15 -4 -100 Unit nA A nA 220 220 420 800 475 800 -300 -650 mV mV mV mV pF pF 4 4 dB dB MHz -600 -750 -820 5 10 Noise figure F Transition frequency ...