MS1226

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 www.DataSheet4U.com MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.0 4.5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 ° C/W MSC0943.PDF 10-28-98 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 www.DataSheet4U.com MS1226 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVcbo BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Test Conditions Min. IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA 65 65 35 4.0 --10 Value Typ. ------------- Max. --------1.0 200 Unit V V V V mA --- DYNAMIC DYNAMIC Symbol POUT GP IMD Cob Condition ss f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz VCE = 28 V Test Conditions Min. PIN = 0.48W PIN = 0.48W PIN = 0.48W VCB = 30V ICQ = 25 mA VCE = 28V ...