Ultra Fast Recovery Diodes
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STPR805DB thru STPR820DB
Ultra Fast Recovery Diodes
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C...
Description
www.DataSheet4U.com
STPR805DB thru STPR820DB
Ultra Fast Recovery Diodes
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q
A=Anode, C=Cathode, TAB=Cathode VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200
STPR805DB STPR810DB STPR815DB STPR820DB
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol I(AV) IFSM VF IR CJ TRR ROJC
Characteristics Maximum Average Forward Rectified Current @TC=125 oC
Maximum Ratings 8.0 100 1.3 0.8 10 500 45 25 3.0 -55 to +150
Unit A A V uA pF ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage IF=8A Maximum DC Reverse Current At Peak Reverse Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) @TJ=25oC @TJ=150oC @TJ=25oC @TJ=100oC
C/W
o
TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high curr...
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