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STPR810DF Dataheets PDF



Part Number STPR810DF
Manufacturers Sirectifier Semiconductors
Logo Sirectifier Semiconductors
Description Ultra Fast Recovery Diodes
Datasheet STPR810DF DatasheetSTPR810DF Datasheet (PDF)

www.DataSheet4U.com STPR805DF thru STPR820DF Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200 STPR805DF STPR810DF STPR815DF STPR820DF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 .

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www.DataSheet4U.com STPR805DF thru STPR820DF Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 50 100 150 200 VRMS V 35 70 105 140 VDC V 50 100 150 200 STPR805DF STPR810DF STPR815DF STPR820DF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ TRR ROJC Characteristics Maximum Average Forward Rectified Current @TC=100 oC Maximum Ratings 8.0 125 0.95 @TJ=25 C @TJ=100oC o Unit A A V uA pF ns o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) 5 500 110 35 2.5 -55 to +150 C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any www.DataSheet4U.com STPR805DF thru STPR820DF Ultra Fast Recovery Diodes 10 WITH HEAT SINK TC PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8 6 4 FREE AMBIENT TA 2 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 0 25 50 75 100 125 150 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 TJ = 125 C INSTANTANEOUS REVERSE CURRENT ,(uA) INSTANTANEOUS FORWARD CURRENT ,(A) 10 TJ = 125 C 50-200V 300-400V 500-600V 10 TJ = 100 C 1.0 TJ = 75 C 1.0 TJ = 25 C 0.1 TJ = 25 C 0.01 0 20 40 60 80 100 120 140 0.1 0 0.2 0.4 0.6 0.8 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PULSE WIDTH 300us 2% Duty cycle 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACITANCE , (pF) 50-400V 100 500-600V TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS .


STPR805DF STPR810DF STPR815DF


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