Ultra Fast Recovery Diodes
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STPR806D
Ultra Fast Recovery Diodes
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L...
Description
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STPR806D
Ultra Fast Recovery Diodes
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q
A=Anode, C=Cathode, TAB=Cathode
STPR806D
VRRM V 600
VRMS V 420
VDC V 600
Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055
Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Symbol I(AV) IFSM VF(MAX) IR CJ TRR ROJC
Characteristics Maximum Average Forward Rectified Current @TC=100oC
Maximum Ratings 8.0 100 1.75 1.4 5 200 60 25 2.5 -55 to +150
Unit A A V uA pF ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC
C/W
o
TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case.
C
FEATURES
* Power factor correction function * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low revers...
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