SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
ᴌExcellent hFE Linearity : hFE...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
ᴌExcellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
A G
L
KTA1505S
www.DataSheet4U.com
EPITAXIAL PLANAR
PNP TRANSISTOR
E B
L
ᴌComplementary to KTC3876S.
2
3
1
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -30 -5 -500 -50 150 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ
C N
P
P
DIM A B C D E G H J K L M N P
MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
H
M
1. EMITTER 2. BASE 3. COLLECTOR
K
SOT-23
Marking
h FE Rank Type Name Lot No.
AZ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance (Note) : hFE(1) Classification hFE(2) Classification O:70ᴕ140 O:25Min. SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Y:120ᴕ240 Y:40Min. TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz GR:200ᴕ400 MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 400 -0.25 -1.0 V V MHz pF ...
