Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s ...
Description
Advanced Power MOSFET
FEATURES
s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 30V s Lower RDS(ON) : 0.012Ω (Typ.)
SFP36N03
BVDSS = 30 V RDS(on) = 0.018Ω ID = 36 A
TO-220
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2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
② ① ① ③ ①
Value 30 36 25.3 144 ±20 775 36 9.4 5.5 94 0.63 - 55 to +175
Units V A A V mJ A mJ V/ns W W/℃
℃ 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.60 -62.5 ℃/W Units
Rev. A1
2001 Fairchild Semiconductor Corporation
SFP36N03
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Sour...
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