NJW3281G

NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant Benefits Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth Applications High−End Consumer Audio Products ♦ Home Amplifiers ♦ Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 250 5.0 250 15 30 1.6 200 1.43 Unit Vdc Vdc Vdc Vdc Adc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −  65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W Stresses exceedin...