K9KAG08U1M

K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY www.DataSheet4U.com K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY www.DataSheet4U.com Document Title 1G x 8 Bit/ 2G x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1. Initial issue 1. tCSD timing is added (min.10ns) 1. Add random data output after Read for copy 2. Add read for copy-back with data output timing guide 3. Modify 2-plane copy-back program operation 4. Modify 2KB program operation timing guide 5. Wafer level capacitance is added. 1. MONO/DDP LGA package ...