TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
High-Speed and High-Voltage Switching Applications Switching...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC5354
High-Speed and High-Voltage Switching Applications Switching
Regulator Applications High-Speed DC-DC Converter Applications
2SC5354
Unit: mm
Excellent switching times: tr = 0.7 μs (max) tf = 0.5 μs (max) (IC = 2 A)
High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900
V
800
V
7
V
5 A
8
2
A
100
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1998-11
1
2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off curr...