SUD50N025-05P
New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.00...
Description
New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
ID (A)a, e
89 80
Qg (Typ)
30 nC
TO-252
FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS D DC/DC Conversion, Low-Side
− Desktop PC − Notebook PC
D
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C TC = 70_C TA = 25_C TA = 70_C
TC = 25_C TA = 25_C
L = 0.1 mH
TC = 25_C TC = 70_C TA = 25_C TA = 70_C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
25 "20 89a, e 80a, e 36b, c 30b, c 100 55 7.7b, c 45 101 83a 58a 11.5b, c 8.0b, c
−55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d Maximum Junction-to-Case
t p 10 sec Steady State
RthJA RthJC
Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 90 _C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73362 S-50935—Rev. A, 08-May-05
Typ...
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