SUD50N02-11P

www.DataSheet4U.com SUD50N02-11P New Product Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.011 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A)a 18 13.5 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-11P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C PD TJ, Tstg TA = 25_C TC= 100_C ID IDM IS Symbol VDS VGS Limit 20 "20 18 13 100 4.1 6.25 38a -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72094 S-22453—Rev. A, 20-Jan-03 www.vishay.com t v 10 sec Steady State RthJA RthJC Symbol Typical 19 40 3.2 Maximum 24 50 3.9 Unit _C/W 1 SUD50N02-11P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forwa...