N-Channel MOSFET
www.DataSheet4U.com SUD50N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
2...
Description
www.DataSheet4U.com SUD50N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.012 @ VGS = 10 V 0.026 @ VGS = 4.5 V
ID (A)a
40c 27c
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
APPLICATIONS
D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server
D
TO-252
G Drain Connected to Tab G D S
Top View Order Number: SUD50N02-12P S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TC = 25_C TC= 100_C ID IDM IS PD PD TJ, Tstg
Symbol
VDS VGS
Limit
20 "20 40c 28c 90 4 33.3 6a - 55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A. Document Number: 72095 S-31269—Rev. B, 16-Jun-03 www.vishay.com t v 10 sec Steady State RthJA RthJC
Symbol
Typical
20 40 3.7
Maximum
25 50 4.5
Unit
_C/W
1
SUD50N02-12P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate ...
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