NTMFS4851N

www.DataSheet4U.com NTMFS4851N Power MOSFET Features 30 V, 66 A, Single N−Channel, SO−8FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package These are Pb−Free Devices* Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±16 15 10.8 2.16 24.3 17.5 5.67 9.5 6.9 0.87 66 47.8 41.7 132 100 −55 to +150 41.7 6 109 W A A °C A V/ns mJ NTMFS4851NT3G W A W A 1 http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 5.9 mW @ 10 V 8.7 mW @ 4.5 V ID MAX 66 A Applications D (5,6) Unit V V A S (1,2,3) W A N−CHANNEL MOSFET G (4) MARKING DIAGRAM D S S S G 4851N AYWWG G D D SO−8 FLAT LEAD CASE 488AA STYLE 1 D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Not...