PDP TRENCH IGBT
PDP TRENCH IGBT
PD - 97132
IRGP4086PbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
300
V
l...
Description
PDP TRENCH IGBT
PD - 97132
IRGP4086PbF
Features
Key Parameters
l Advanced Trench IGBT Technology
VCE min
300
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 70A
1.90
V
Circuits in PDP Applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
IRP max @ TC= 25°C c TJ max
250 150
A °C
l High Repetitive Peak Current Capability
l Lead Free Package
C
C
G
E
n-channel
E C G
TO-247AC
G G a te
C C o lle c to r
E Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C
Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT) RθCS RθJA
Parameter Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, g...
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