9D5N20F1 Datasheet | KHB9D5N20F1





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Part Number 9D5N20F1
Description KHB9D5N20F1
Manufacture KEC
Total Page 7 Pages
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Features: SEMICONDUCTOR TECHNICAL DATA General Des cription KHB9D5N20P1/F1/F2 www.DataShe et4U.com N CHANNEL MOS FIELD EFFECT TR ANSISTOR KHB9D5N20P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0. 2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has bet ter characteristics, such as fast switc hing time, low on resistance, low gate charge and excellent avalanche characte ristics. It is mainly suitable for elec tronic ballast and switch mode power su pplies. FEATURES VDSS=200V, ID=9.5A Dr ain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0 .2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB MAXIMUM RATING (Tc=25 ) RATING A F KHB9D5N20F1 C CHARACTERIST IC SYMBOL KHB9D5N20F1 UNIT KHB9D5N20P 1 KHB9D5N20F2 E O DIM B MILLIMETERS Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 .

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A
Drain-Source ON Resistance
: RDS(ON)=400m @VGS = 10V
Qg(typ.)=18.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB9D5N20F1 UNIT
KHB9D5N20P1
KHB9D5N20F2
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
30
9.5 9.5*
38 38*
180
8.7
5.5
87 40
0.7 0.32
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
1.44
62.5
3.13 /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB9D5N20P1/F1/F2
www.DataSheet4U.com
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB9D5N20P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB9D5N20F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB9D5N20F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7

                    






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