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HC8050S

SHANTOU HUASHAN ELECTRONIC

NPN SILICON TRANSISTOR

NPN S I L I C O N T RA N S I S T O R www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HC8050S █ APPLI...


SHANTOU HUASHAN ELECTRONIC

HC8050S

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NPN S I L I C O N T RA N S I S T O R www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HC8050S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg —— Storage Temperature ………………………… -55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 625W VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………20V V EB O —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current………………………………………500mA 1―Emitter,E 2―Collector, C 3―Base,B TO-92 █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE(2) 0.1 0.1 85 40 0.6 0.6 40 20 5 1.2 0.73 500 μA μA VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=500mA HFE(1) DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) VBE(on) BVCBO BVCEO BVEBO Base- Emitter Saturation Voltage V V V V V V IC=500mA, IB=50mA IC=500mA,IB=50mA VCE=1V, IC=10mA IC=100μA,IE=0 IC=2mA,IB=0 IE=100μA,IC=0 Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification B 85—160 C 120—200 D 160—300 E 270—500 NPN S I L I C O N T RA N S I S T O R www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HC8050S ...




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