SPW35N60CFD

www.DataSheet4U.com SPW35N60CFD CoolMOS Features TM Power Transistor Product Summary V DS R DS(on),max ID 600 V New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant 0.118 Ω 34 A PG-TO247 Type SPW35N60CFD Package PG-TO247 Ordering Code Q67045A5053 Marking 35N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=34.1 A, V DS=480 V, T j=125 °C I S=34.1 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=10 A, V DD=50 V I D=20 A, V DD=50 V Value 34.1 21.6 85 1300 1 20 80 40 600 ±20 ±30 313 -55 ... 150 W °C A V/ns V/ns A/µs V mJ Unit A Rev. 1.2 page 1 2005-06-28 www.DataSheet4U.com SPW35N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6...