DATA SHEET
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JUNCTION FIELD EFFECT TRANSISTOR
2SK508
HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JU...
DATA SHEET
www.DataSheet4U.com
JUNCTION FIELD EFFECT
TRANSISTOR
2SK508
HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT
TRANSISTOR
DESCRIPTION The 2SK508 is low input capacitance and High forward transfer
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4 –0.05
+0.1
admittance, it is suitable for AM tuner, wireless installation and cordless telephone.
1.5
0.65 +0.1 –0.15
0.95
Ciss = 4.8 pF TYP. (VDS = 5.0 V, ID = 10 mA, f = 1.0 MHz) High forward transfer admittance | yfs |2 = 26 mS TYP. (VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz) ORDERING INFORMATION
PART NUMBER 2SK508 PACKAGE SC-59 (Mini Mold)
1
0.3
Marking
1.1 to 1.4 0.16 –0.06
+0.1
0.4 +0.1 –0.05
Low input capacitance
2.9 ±0.2
FEATURES
0.95
2 3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Gate to Drain Voltage Gate to Source Voltage Drain to Source Voltage (VGS = −4.0 V) Drain Current (DC) Gate Current (DC) Total Power Dissipation Junction Temperature Storage Temperature VGDO VGSO VDSX ID IG PT Tj Tstg −15 −15 15 50 5 200 150 −55 to +150 V V V mA mA mW °C °C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18962EJ2V0DS00 (2nd edition) (Previous No. TC-1651) Date Published December 2007 NS Printed in Japan
0 to 0.1
1. ...
View 2SK508 Datasheet
