Document
www.DataSheet4U.com Si4835BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30 0.030 @ VGS = - 4.5 V - 7.5
FEATURES
ID (A)
- 9.6
rDS(on) (W)
0.018 @ VGS = - 10 V
D TrenchFETr Power MOSFET D Advanced High Cell Density Process
APPLICATIONS
D Load Switches - Notebook PCs - Desktop PCs
S
SO-8
S S S G 1 2 3 4 Top View P-Channel MOSFET Ordering Information: Si4835BDY Si4835BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 7.7 IDM IS - 2.1 2.5 1.6 - 55 to 150 - 50 - 1.3 1.5 0.9 W _C - 5.9 A
Symbol
VDS VGS
10 secs
Steady State
- 30 "25
Unit
V
- 9.6
- 7.4
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72029 S-31062—Rev. C, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
39 70 18
Maximum
50 85 22
Unit
_C/W
1
Si4835BDY
Vishay Siliconix
New Product
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "25 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 9.6 A VGS = - 4.5 V, ID = - 7.5 A VDS = - 15 V, ID = - 9.6 A IS = - 2.1 A, VGS = 0 V - 50 0.014 0.023 30 - 0.8 - 1.2 0.018 0.030 - 1.0 - 3.0 "100 -1 -5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 1.0 VDS = - 15 V, VGS = - 5 V, ID = - 9.6 A 25 6.5 12.5 2.9 15 13 60 45 45 4.9 25 20 100 70 80 ns W 37 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V I D - Drain Current (A) 40 50
Transfer Characteristics
TC = - 55_C 25_C 125_C 30
30
20
20
10 3V 0 0 1 2 3 4 5 6
10
0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 72029 S-31062—Rev. C, 26-May-03
www.DataSheet4U.com Si4835BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 r DS(on) - On-Resistance ( W ) 3200
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.04
2400 Ciss
0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01
1600
800 Crss 0.00 0 10 20 30 40 50 0 0 6
Coss
12
18
24
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9.6 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 9.6 A 1.4
6
r DS(on) - On-Resistance (W ) (Normalized) 20 30 40 50
1.2
4
1.0
2
0.8
0 0 10 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.05
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
0.04 ID = 9.6 A 0.03
I S - Source Current (A)
TJ = 150_C 10
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72029 S-31062—Rev. C, 26-May-03
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Si4835BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 80
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Single Pulse Power, Junction-to-Ambient
0.4 60 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W)
40
0.0
20 - 0.2
- 0.4 - 50
- 25
0
25
50
75
100
125
150
0 10 -2
10 -1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Safe Operating Area
100 IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc P(t) = 0.0001
1
0.1
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
Single P.