Fast switching diode
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Preliminary
SIDC81D120E6
Fast switching diode chip in EMCON-Technology
FEATURES: • 1200V EMCON tec...
Description
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Preliminary
SIDC81D120E6
Fast switching diode chip in EMCON-Technology
FEATURES: 1200V EMCON technology 130 µm chip soft, fast switching low reverse recovery charge small temperature coefficient
A
This chip is used for: EUPEC power modules and discrete devices Applications: SMPS, resonant applications, drives
C
Chip Type
SIDC81D120E6
VR
IF
Die Size 9 x 9 mm2
Package sawn on foil
Ordering Code Q67050-A4128A001
1200V 100A
MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9x9 81 / 69.39 8.28 x 8.28 130 150 180 169 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm
2
Edited by INFINEON Technologies AI PS DD HV3, L 4202P, Edition 1, 8.01.2002
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Preliminary
SIDC81D120E6
Maximum Ratings
Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current
(depending on wire bond configuration)
Symbol VRRM IF I FSM I FRM Tj , Ts t g
Condition
Value 1200 100
Unit V
tP = 10 ms sinusoidal
tbd 200 -55...+150
A
Maximum repetitive forward c...
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