9Z22 Data Sheet PDF | Vishay Siliconix





(Datasheet) 9Z22 PDF Download

Part Number 9Z22
Description IRF9Z22
Manufacture Vishay Siliconix
Total Page 9 Pages
PDF Download Download 9Z22 Datasheet PDF

Features: IRF9Z22, SiHF9Z22 www.DataSheet4U.com Vi shay Siliconix Power MOSFET PRODUCT SU MMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 26 6.2 8.6 Single S FEATURES - 50 0.33 • • • • • • • P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Curren t Ease of Paralleling Excellent Tempera ture Stability Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 G DESCRIPTION The Power MOSFET technolog y is the key to Vishay’s advanced lin e of Power MOSFET transistors. The effi cient geometry and unique processing of the Power MOSFET design achieve very l ow on-state resistance combined with hi gh transconductance and extreme device ruggedness. The P-Channel Power MOSFET s are designed for application which require the convenience of reverse pola rity operation. They retain all of the features of the more common N-Channel P ower MOSFET’s such as voltage control , very fast switching, ease of paralleling, and excellent temperature stability. P-C.

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9Z22 datasheet
Power MOSFET
IRF9Z22w,wSw.DiaHtaSFhee9t4UZ.co2m2
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
26
6.2
8.6
Single
0.33
TO-220
S
G
S
D
G
D
P-Channel MOSFET
FEATURES
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
Available
RoHS*
COMPLIANT
• Ease of Paralleling
• Excellent Temperature Stability
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-Channel Power MOSFET’s are designed for
application which require the convenience of reverse polarity
operation. They retain all of the features of the more common
N-Channel Power MOSFET’s such as voltage control, very
fast switching, ease of paralleling, and excellent temperature
stability.
P-Channel Power MOSFETs are intended for use in power
stages where complementary symmetry with N-Channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by the
reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9Z22PbF
SiHF9Z22-E3
IRF9Z22
SiHF9Z22
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain-Gate Voltage (RGS = 20 KΩ)
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
VGDR
ID
IDM
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
L = 100 µH
TC = 25 °C
for 10 s
ILM
IL
PD
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 µH, RG = 25 Ω
c. ISD - 6.7 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C.
d. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91350
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
LIMIT
- 50
± 20
- 50
- 8.9
- 5.6
- 36
0.32
- 36
- 2.2
40
- 55 to + 150
300d
UNIT
V
A
W/°C
A
A
W
°C
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