BFU725F

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high gain microwave transistor  Noise figure (NF) = 0.7 dB at 5.8 GHz  High maximum stable gain 27 dB at 1.8 GHz  110 GHz fT silicon germanium technology 1.3 Applications  2nd LNA stage and mixer stage in DBS LNB’s  Satellite radio  Low noise amplifiers for microwave communications systems  WLAN and CDMA applications  Analog/digital cordless applications  Ka band oscillators (DRO’s) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCBO VCEO VEBO IC Ptot hFE collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain Conditions open emitter open base open collector Tsp  90 C IC = 10 mA; VCE = 2 V; Tj = 25 C Min Typ Max Unit -- 10 V -- 2.8 V -- 1.0 V - 25 40 mA [1] - - 136 mW 160 280 400 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor Table 1. Quick reference data …continued Symb...