IRF8010S

www.DataSheet.in PD - 94573 SMPS MOSFET Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l HEXFET® Power MOSFET IRF8010S IRF8010L ID 80A‡ 15mΩ VDSS 100V RDS(on) max D2Pak IRF8010S TO-262 IRF8010L Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 80 57 320 260 1.8 ± 20 i Units A W W/°C V V/ns °C c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e 16 -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Junction-to-Case Junction-to-Case (end of life) Typ. ––– ––– 0.50 ––– Max. 0.57 0.80 ––– 40 Units °C/W g j Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount, steady state) Notes  through ˆ are on page 8 www.irf.com 1 01/28/03 www.DataSheet.in IRF8010S/IRF8010L Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ...