www.vishay.com
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
8.4 3.5 6.0 Single
0.20
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
DPAK (TO-252) SiHLR014-GE3 IRLR014PbF SiHLR014-E3
DPAK (TO-252) IRLR014TRPbFa SiHLR014T-E3a
DPAK (TO-252) SiHLR014TRL-GE3 IRLR014TRLPbFa SiHLR014TL-E3a
IPAK (TO-251) SiHLU014-GE3 IRLU014PbF SiHLU014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta
VGS at 5.0 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
TC = 25 °C TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
VDS VGS ID IDM
EAS PD dV/dt TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT 60 ± 10 7.7 4.9 31 0.20
0.020 27.4 25 2.5 4.5 - 55 to + 150 260
UNIT V
A
W/°C mJ W V/ns °C
S13-0164-Rev. D, 04-Feb-13
1
Document Number: 91321
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 110 50 5.0
UNIT °C/W
SPECIFICATIONS.