ULM850-10-TT-N0101U

www.DataSheet.in 10 Gbps VCSEL 850 nm 1x1, 1x4/12 chip Vertical Cavity Surface-Emitting Laser High speed up to 10 Gbps Unsealed 85% r.H./85° C certified 1x1, 1x4, 1x12 chips ELECTRO-OPTICAL CHARACTERISTICS (chip) PARAMETER Emission wavelength Threshold current Threshold voltage Slope Efficiency Variation of ηs over temp. Optical output power Variation of Popt over temp. Laser voltage Differential series resistance 3dB modulation bandwidth Rise and fall time Relative intensity noise Wavelength tuning over current Wavelength tuning over temp. Thermal resistance Beam divergence Spectral bandwidth RThermal θ ∆λ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT PRELIMINARY SYMBOL UNITS MIN TYP MAX TEST CONDITIONS nm 840 850 860 Iop=6mA; T=0..70° C λR Ith Uth ηs ∆ηs (T) Popt ∆Popt (T) Uop RS ν3dB t R /t F 20/80 RIN mA V W/A W/A mW mW V Ω GHz ps dB/Hz nm/mA nm/K K/mW ° nm 20 50 8 30/45 0.3 0.07 1.8 2.5 T=20° C 30 I op=6mA; full-width 1/e^2; T=20° C 0.45 Iop=6mA; rms; T=20° C 2.0 70 1.0 1.5 0.3 0.4 1.0 T=0..70° C 1.8 T=0..70° C 0.5 T=20° C 0.12 T=0..70° C 2.5 Iop=6mA; T=0..70° C 0.8 Iop=6mA; T=0..70° C Iop=6mA; T=20° C 90 Iop=6mA; T=20° C Iop=6mA; T=20° C 55 Iop=6mA; ER=8dB; T=20° C -130 -120 Iop=6mA; 0.1..10GHz; T=20° C ABSOLUTE MAXIMUM RATINGS Storage temperature Operating temperature Electrical power dissipation Continous forward current Reverse voltage Soldering temperature - 40 .. 125° C -20 .. 85° C 20 mW 8 mA 8V 330° C NOTICE: Stresses greater than those...