PBSS4041PT

DataSheet.in PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 02 — 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NT. 1.2 Features and benefits „ „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −3 A; IB = −300 mA [1] Conditions open base Min - Typ 80 Max −60 −2.7 −8 120 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. DataSheet.in NXP Semiconductors PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 1 2 2 sym013 Simplified outline 3 Graphic symbol 3 1 3. Ordering information Table 3. Ordering information Package Name PBSS4041PT Description plastic surface-mounted ...