PBSS4041SN

DataSheet.in PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4041SN SOT96-1 Name SO8 PNP/PNP complement PBSS4041SP NPN/PNP complement PBSS4041SPN Type number 1.2 Features and benefits „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.2 A [1] Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 32 Max 60 6.7 15 48 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. D a t a S h e e t . i n NXP Semiconductors PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 TR1 TR2 Simplified outline 8 5 Graphic symbo...