AUIRF7675M2TR

DataSheet.in PD -97552 AUTOMOTIVE GRADE Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 250W per Channel into 4Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7675M2TR AUIRF7675M2TR1 DirectFET™ Power MOSFET ‚ V(BR)DSS 150V RDS(on) typ. 47m max. RG (typical) Qg (typical) : 56m: 1.2: 21nC S D G S D Applicable DirectFET Outline and Substrate Outline  M2 DirectFET ™ ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance...