C5390

DataSheet.in 2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features Excellent high frequency characteristics fT = 1.4GHz (typ.) Low output capacitance C ob = 2.4 pF (typ.) Isolated package TO–126FM Outline TO–126FM 12 3 1. Emitter 2. Collector 3. Base DataSheet.in 2SC5390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC PC * Tj Tstg 1 Ratings 110 110 3 200 400 1.4 7 150 –55 to +150 Unit V V V mA mA W W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE VBE Min 110 110 — — 30 — — 1.0 — Typ — — — — — — — 1.4 2.4 Max — — 10 10 100 1 1 — 3.5 V V GHz pF Unit V V µA µA Test Conditions I C = 10É A, IE = 0 I C = 1mA, RBE = ∞ VCB = 100V, IE = 0 VE B = 3V, IC = 0 VCE = 10 V, IC = 10mA VCE = 10 V, IC = 10mA I C = 200mA, IB = 20mA VCE = 10 V, IC = 50mA VCB = 30V, IE = 0 f = 1MHz Collector to emitter saturation VCE(sat) voltage Gain bandwidth product fT Collector Output capacitance Cob DataSheet.in 2SC5390 Main Characteristics Collector P...