N-Channel Enhancement Mode Power MosFET
SSM9971
Elektronische Bauelemente 5A, 60V,RDS(ON) 50m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product...
Description
SSM9971
Elektronische Bauelemente 5A, 60V,RDS(ON) 50m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design.
SOT-223
Features
* Simple Drive Requirement * Low On-Resistance
REF.
D
Date Code
9 9 7 1
G
A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
G
D
S
Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @10V Continuous Drain Current, VGS @10V Pulsed Drain Current
1,2 3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
60
±25 5.0 3.2 30 2.7 0.02
Unit
V V A A A W
W / oC
o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3 Max.
Symbol
Rthj-a
Ratings
45
Unit
o
C/W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSM9971
Elektronische Bauelemente
o
5A, 60V,RDS(ON) 50m£[
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Volt...
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