HMC-APH478

HMC-APH478 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Features Output IP3: +38.5 dBm P1dB: +30 dBm Gain: 17.5 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Typical Applications This HMC-APH478 is ideal for: Point-to-Point Radios 3 LINEAR & POWER AMPLIFIERS - CHIP Point-to-Multi-Point Radios Military & Space Die Size: 3.92 x 1.28 x 0.1 mm Functional Diagram General Description The HMC-APH478 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 18 and 20 GHz. The HMC-APH478 provides 17.5 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH478 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2) 28.5 16 Min. Typ. 18 - 20 17.5 8 5 30 38.5 900 Max. Units GHz dB dB dB dBm dBm mA [1] Unless otherwise indicated, all measurements are from probed die [...