HMC-APH633

HMC-APH633 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Typical Applications This HMC-APH633 is ideal for: Short Haul / High Capacity Links Features Gain: 13 dB P1dB: +20 dBm Supply Voltage: +4V 50 Ohm Matched Input/Output Die Size: 2.47 x 1.60 x 0.05 mm 3 LINEAR & POWER AMPLIFIERS - CHIP Wireless LAN Bridges Military & Space E-Band Communication Systems Functional Diagram General Description The HMC-APH633 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 71 and 76 GHz. The HMC-APH633 provides 13 dB of gain, and an output power of +20 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH633 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Supply Current (Idd1+Idd2) [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd total = 240 mA 9 Min. Typ. 71-76 13 8 10 2...