BGA2800

BGA2800 MMIC wideband amplifier Rev. 5 — 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits  Internally matched to 50   A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz  Output power at 1 dB gain compression = 1 dBm  Supply current = 10.5 mA at a supply voltage of 3.3 V  Reverse isolation > 30 dB up to 2 GHz  Good linearity with low second order and third order products  Noise figure = 4 dB at 950 MHz  Unconditionally stable (K > 1) 1.3 Applications  LNB IF amplifiers  General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pin 1 2, 5 3 4 6 Pinning Description VCC GND2 RF_OUT GND1 RF_IN Simplified outline Graphic symbol        V\P NXP Semiconductors BGA2800 MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description BGA2800 - plastic surface-mounted package; 6 leads Version SOT363 4. Marking Table 3. Marking Type number BGA2800 Marking code *E7 Description * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCC ICC...