HMC907

HMC907 v00.0310 GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Features High P1dB Output Power: +27 dBm High Gain: 14 dB High Output IP3: +38 dBm Single Supply: +10V @ 350 mA 50 Ohm Matched Input/Output Die Size: 2.91 x 1.33 x 0.1 mm Typical Applications The HMC907 is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure 3 Amplifiers - Linear & Power - Chip Fiber Optics Functional Diagram General Description The HMC907 is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 38 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.6 dB from DC to 12 GHz making the HMC907 ideal for EW, ECM, Radar and test equipment applications. The HMC907 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length. Electrical Specifications, TA = +25 °C, Vdd = +10V, Idd = 350mA Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 10V) 23 12 Min. Typ. 0.2 - 8 13.5 ±0.6 0.008 15 15 26 28.5 37 3.5 ...