DataSheet.in
BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 — 9 August 2010 Preliminary data sheet
1. ...
DataSheet.in
BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver
transistor
Rev. 1 — 9 August 2010 Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS
transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8
1.2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
DataSheet.in
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLL6H0514L-130 (SOT1135A)
1 2 3 2 3
sym112
1
BLL6H0514LS-130 (SOT1135B) 1 2 3 drain gate source
[1]
1 2
1
3
sym112
3
2
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name Description BLL6H0514L-130 BLL6H0514LS-130 flanged ceramic p...