BLF6G10L-40BRN

DataSheet.in BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 23.0 ηD (%) 15.0 ACPR (dBc) −42.5 Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: ‹ Average output power (PL(AV)) = 2.5 W ‹ Power gain (Gp) = 23.0 dB ‹ Drain efficiency (ηD) = 15.0 % ‹ ACPR = −42.5 dBc „ Easy power control „ Integrated ESD protection „ Enhanced ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (728 MHz to 960 MHz) „ Internally matched for ease of use „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) „ Integrated current sense DataSheet.in NXP Semiconductors BLF6G10L-40BRN Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi-carrier GSM and...