H1116

Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICO N T R A N S I S T O R H1116 APPLICATIONS Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Junction Temperature -55~150 150 PC Collector Dissipation VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 75 0mW - 60 V - 50 V VEBO Emitter- Base Voltage -6V IC Collector Current -1A ICP Collector Current Pulse -2A ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current HFE 1 DC Current Gain HFE 2 DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage fT Current Gain-Bandwidth Product Cob Output Capacitance hFE Classification TO-92 1 Emitter E 2 Collector C 3 Base B Unit Test Conditions 135 270 200 400 300 600 Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1116 Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R ANSISTOR H1116 ...