2SA1664

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SA1664 FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current : -0.8 A ICM Collector-base voltage V V(BR)CBO : -35 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz -35 -30 -5 -0.1 -0.1 100 35 -0.7 -0.5 µA µA 320 V V MHz pF -0.8 120 19 fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking O 100-200 RO Y 160-320 RY ...