2SA1664

www.DataSheet.in SMD Type PNP Transistor 2SA1664 Transistors Features Collector current IC=-0.8A Power dissipation PC=0.5W Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -35 -30 -5 -0.8 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base emitter voltage Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons IC = -1mA, IE = 0 IC = -10 mA, IB = 0 IE = -1mA, IC = 0 VCB = -35 V, IE = 0 VEB=-5V,IC=0 VCE = -1V, IC = -100 mA VCE = -1 V, IC = -700 mA VCE(sat) IC = -500 mA, IB = -20 mA VBE Cob fT VCE=-1V,IC=-10mA VCB = -10V, IE = 0, f = 1 MHz VCE = -5V, IC=-10mA -0.5 120 19 100 35 -0.7 -0.8 V V MHz pF Min -35 -30 -5 -0.1 -0.1 320 Typ Max Unit V V V A A hFE Classification Marking Rank hFE 100 RO O 200 160 RY Y 320 www.kexin.com.cn 1 ...