RKD703KL
Silicon Schottky Barrier Diode for high Speed Switching
REJ03G1756-0200 Rev.2.00 Oct 20, 2009
Features
• Low P...
RKD703KL
Silicon
Schottky Barrier Diode for high Speed Switching
REJ03G1756-0200 Rev.2.00 Oct 20, 2009
Features
Low Power consumption (Low reverse leak current) and high speed (Low capacitance). We can support the lineup of environmental friendly halogen free type on your demand. Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design.
Ordering Information
Part No RKD703KL R Laser Mark N Package Name EFP Package Code PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel)
Pin Arrangement
Cathode mark Mark 1
N −
2
1. Cathode 2. Anode
REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 1 of 5
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RKD703KL
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Average forward current Non-Repetitive Peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse. Symbol VRRM IO *1 IFSM *2 Tj Tstg Value 30 100 200 125 –55 to +125 Unit V mA mA °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 VF3 VF4 IR1 IR2 C Rth
Min — — — — — — — — Typ — — — — — — — 800 Max 0.25 0.30 0.35 0.60 6 50 5 — Unit V Test Condition IF = 1 mA IF = 5 mA IF = 20 mA IF = 100 mA VR =10 V VR = 30 V VR = 1 V, f = 1 MHz Polyimide board *1
V V V
μA μA pF °C/W
Reverse current Capacitance Thermal resistance
Notes: 1. Polyimide board
20h×15w×0.8t
0.3
3.0
0.5
Unit: mm
1.0
2. In the EFP package, some lead is exposed ...