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KMC7D0CN20CA

KEC

Common N-Ch Trench MOSFET

SEMICONDUCTOR TECHNICAL DATA General Description Switching regulator and DC-DC Converter applications. It s mainly suita...


KEC

KMC7D0CN20CA

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Description
SEMICONDUCTOR TECHNICAL DATA General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Li-ion battery pack. KMC7D0CN20CA Common N-Ch Trench MOSFET FEATURES VDSS=20V, ID=7A. Low Drain-Source On Resistance. : RDS(ON)=20.5m (Max.) @ VGS=4.5V : RDS(ON)=21.0m (Max.) @ VGS=4.0V : RDS(ON)=22.5m (Max.) @ VGS=3.1V : RDS(ON)=26.0m (Max.) @ VGS=2.5V ESD Protection. Super High Dense Cell Design. MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current ) SYMBOL VDSS VGSS ID * IDP * IS * RATING 20 12 7 A 28 1.7 1.5 150 -55 150 /W A W UNIT V V Marking Pulsed Source-Drain Diode Current Drain Power Dissipation Ta = 25 PD * Tj Tstg RthJA* 10sec Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note) * : Surface Mounted on 1 83.3 1 FR4 Board, t 2008. 3. 4 Revision No : 2 1/5 www.DataSheet.in KMC7D0CN20CA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth VGS=0V, ID=250 A VDS=16V, VGS=0V VGS= 10V, VDS=0V VDS=VGS, ID=250 A VGS=4.5V, ID=4.0A VGS=4.0V, ID=4.0A Drain-Source ON Resistance RDS(ON)* VGS=3.1V, ID=4.0A VGS=2.5V, ID=4.0A Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-...




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