SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications. It s mainly suita...
SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching
regulator and DC-DC Converter applications. It s mainly suitable for Li-ion battery pack.
KMC7D0CN20CA
Common N-Ch Trench MOSFET
FEATURES
VDSS=20V, ID=7A. Low Drain-Source On Resistance. : RDS(ON)=20.5m (Max.) @ VGS=4.5V : RDS(ON)=21.0m (Max.) @ VGS=4.0V : RDS(ON)=22.5m (Max.) @ VGS=3.1V : RDS(ON)=26.0m (Max.) @ VGS=2.5V ESD Protection. Super High Dense Cell Design.
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current
)
SYMBOL VDSS VGSS ID * IDP * IS * RATING 20 12 7 A 28 1.7 1.5 150 -55 150 /W A W UNIT V V Marking
Pulsed Source-Drain Diode Current Drain Power Dissipation Ta = 25
PD * Tj Tstg RthJA* 10sec
Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note) * : Surface Mounted on 1
83.3
1 FR4 Board, t
2008. 3. 4
Revision No : 2
1/5
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KMC7D0CN20CA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth VGS=0V, ID=250 A VDS=16V, VGS=0V VGS= 10V, VDS=0V VDS=VGS, ID=250 A VGS=4.5V, ID=4.0A VGS=4.0V, ID=4.0A Drain-Source ON Resistance RDS(ON)* VGS=3.1V, ID=4.0A VGS=2.5V, ID=4.0A Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-...