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SFS1606G Dataheets PDF



Part Number SFS1606G
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description Super Fast Rectifiers
Datasheet SFS1606G DatasheetSFS1606G Datasheet (PDF)

SFS1601G – SFS1608G Taiwan Semiconductor 16A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Low forward voltage drop ● Ideal for automated placement ● High current capability ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 16 A 50 - 600 .

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SFS1601G – SFS1608G Taiwan Semiconductor 16A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Low forward voltage drop ● Ideal for automated placement ● High current capability ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 16 A 50 - 600 V IFSM TJ MAX Package 125 A 150 °C TO-263AB (D2PAK) Configuration Dual dies MECHANICAL DATA ● Case: TO-263AB (D2PAK) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.41g (approximately) TO-263AB (D2PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SFS SFS SFS SFS SFS SFS SFS SFS PARAMETER SYMBOL 1601 1602 1603 1604 1605 1606 1607 1608 UNIT Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value VRRM G G G G G G G G SFS SFS SFS SFS SFS SFS SFS SFS 1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G 50 100 150 200 300 400 500 600 V VR(RMS) 35 70 105 140 210 280 350 420 V Forward current IF Surge peak forward current, 8.3ms single half sine wave IFSM superimposed on rated load 16 A 125 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: O2103 SFS1601G – SFS1608G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL RӨJC TYP 2.5 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL SFS1601G SFS1602G SFS1603G Forward voltage per diode(1) SFS1604G SFS1605G IF = 8A, TJ = 25°C VF SFS1606G SFS1607G SFS1608G Reverse current @ rated VR per diode(2) TJ = 25°C IR TJ = 125°C SFS1601G SFS1602G SFS1603G Junction capacitance per diode SFS1604G SFS1605G 1MHz, VR = 4.0V CJ SFS1606G SFS1607G SFS1608G Reverse recovery time Notes: IF = 0.5A, IR = 1.0A Irr = 0.25A trr 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TYP 80 60 - MAX UNIT 0.975 V 1.300 V 1.700 V 10 µA 400 µA - pF - pF 35 ns ORDERING INFORMATION ORDERING CODE(1) SFS16xG PACKAGE TO-263AB (D2PAK) Notes: 1. “x” defines voltage from 50V(SFS1601G) to 600V(SFS1608G) PACKING 800 / Tape & Reel 2 Version: O2103 SFS1601G – SFS1608G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve AVERAGE FORWARD CURRENT (A) 20 16 12 8 4 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 100 90 SFS1601G - SFS1604G 80 70 SFS1605G - SFS1608G 60 50 f=1.0MHz Vsig=50mVp-p 40 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTAN.


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