SFS1827

SFS1826 thru SFS1829 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet FEATURES: Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage SFS1826 SFS1827 SFS1828 SFS1829 SFS1826 SFS1827 SFS1828 SFS1829 Symbol VDRM VRRM Value 200 250 300 400 300 350 400 500 1.6 1.0 0.7 15 0.1 0.01 0.1 6.0 -65 to +200 -65 to +200 72 Units Volts Non-Repetitive Peak Reverse Blocking Voltage (t < 5.0 ms) RMS On-State Current (All Conduction Angles) Average On-State Current Peak Non-Repetitive Surge Current (One Cycle, 60 Hz, TC = 80oC ) Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case VRSM Volts IT (RMS) TC = 50oC TA = 25oC IT (AV) ITSM PGM PG (AV) IGM VGM TJ Tstg RθJC Amps Amps Amps Watts Watts Amps Volts o o o C C C/W www.DataSheet.in SFS1826 thru SFS1829 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Peak Reverse Blocking Current...