RUM002N05

1.2V Drive Nch MOSFET RUM002N05  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RUM002N05 Type Taping T2L 8000   Inner circuit (3) ∗1 ∗2  Absolute maximum ratings (Ta = 25 C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Continuous ID Drain current Pulsed IDP *1 Continuous IS Source current (Body Diode) Pulsed ISP *1 Power dissipation PD *2 Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. (1) (2) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE Limits 50 8 200 800 125 800 150 150 55 to +150 Unit V V mA mA mA mA mW C C (1) GATE (2) SOURCE (3) DRAIN Tch Tstg  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.02 - Rev.A www.DataSheet.in RUM002N05 Electrical characteristics (Ta = 25C) Parameter Symbol Data Sheet Min. 50 0.3 - Typ. 1.6 1.7 1.9 2.0 2.4 25 6 3 4 6 15 55 Max. 10 1 1.0 2.2 2.4 2.7 4.0 7.2 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V Gate-source leakage Zero gate voltage drain curr...