TQP15

TQP15 0.15 um D-mode pHEMT Foundry Service Process Cross Section Diagram Updated Process Diagram Passivation Nitride Features D-Mode, -1.0 V Vp InGaAs Active Layer pHEMT Process 0.15 µm Low Cost Optical Lithography Gates High Density Interconnects: 1 Global 1 Local High-Q Passives Thin Film Resistors High Value Capacitors (620 pF/mm2 Backside Vias Optional Based on Production TQP13 Processes Global Plated Metal 2 (4 um) MIM Capacitor NiCr or HVR Resistor K55 Bell Metal Bell Metal (<1 um) CTOP K55 Bell Metal-Local Interconnect (<1 um) BCB Ohmic WRCS N+ Pseudomorphic channel Damage Isolation Implant Process Description TriQuint’s TQP15 process is based on our production-released TQP13 processes. TQP15 is a breakthrough technology offering both high breakdown voltage and high frequency/ gain capability all within an optical process technology that enables commercialization of mmw markets. TQP15 is targeted at the emergent Ka-band segment and is ideal for the VSAT, satellite communications, and point-to-point radio markets. The two metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity. Precision NiCr resistors and high value MIM capacitors are included allowing higher levels of integration, while maintaining smaller, cost-effective die sizes. Applications Medium Power, D-Mode Applications Point-to-Point Radio Converters VSAT Ka-band P...