Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB52N90P
VDSS ID25
...
Description
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB52N90P
VDSS ID25
RDS(on) trr
= = ≤ ≤
900V 52A 160mΩ 300ns
PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 52 104 26 2 20 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb. g Features
z z z
G
D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
Fast Intrinsic Diode Avalanche Rated Low Package Inductance
Advantages
z
z z
Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 900 3.5 6.5 V V
Applications
z
z z z
± 200 nA 50 μ A 4 mA 160 m Ω
z
Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor drives Robotics and Servo Controls
VGS = 10V, ID = 0.5 ID25, Note 1
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DS100064A(02/09)
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IXFB52N90P
Symbol Test Conditions (...
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